Abstract
AbstractPolyamic acids synthesized from di‐trifluoromethyl methane bis(phthalic anhydride) and 4,4'‐diaminophyenyl sulfone (F‐1) and 4,4'‐diaminophenyl ether (F‐4) were found to have excellent negative E‐beam resist properties. The best materials contain about 90 percent imidized structural units having sensitivities of 1.5 to 2.5 μC cm−2 and contrast of 1.0 to 1.3. Polyamic acid of pyromellitic dianhydride and 4,4'‐diaminophenyl sulfone (P‐1) imidized to 97 percent exhibits useful positive E‐beam resist properties. Radiation induces imidization and chain scission to alter the solubility of the resist polymers resulting in the formation of latent images.
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