Abstract
The present study deals with fabrication of polyaniline-passivated n-type porous silicon (PS) for ammonia detection at room temperature. PS is fabricated by electrochemical etching from n-type crystalline silicon(C–Si). Polyaniline (PANI) passivation is incorporated on PS by electrochemical polymerization of aniline. Morphological, elemental, structural and optical characterization of the heterostructure is studied through field emission scanning electron microscopy (FESEM), energy-dispersive X-rays (EDX), Raman spectroscopy, UV–Visible reflectance spectroscopy and photoluminescence (PL) spectroscopy, respectively. PANI-PS heterostructure shows fair ammonia detection with fairly low values of response time and detection limit.
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