Polyaniline Based Field Effect Transistor for Humidity Sensor

Mandira Biswas,Subir Kumar Sarkar,Anup Dey

doi:10.1007/s12633-021-01594-3

Mandira Biswas, Subir Kumar Sarkar + Show 1 more

Open Access

https://doi.org/10.1007/s12633-021-01594-3

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Journal: Silicon	Publication Date: Jan 19, 2022
Citations: 10	License type: cc-by

Affiliation: Jadavpur University

Abstract

In this present research work, we presented a new Bottom Gate P-Type Organic Field Effect Transistor (OFET) humidity sensor and its applicability towards humidity has been experimentally demonstrated. P-type organic semiconductor polyaniline (PANI) has been used in a variety of applications, including logic circuit components, electromagnetic shielding, chemical sensing, and anticorrosion. Humidity sensor can be used to monitor relative humidity (RH) in various environments. We only focus on the fabrication of conducting polymer OFETs with top contact to measure humidity and verify I-V properties. The current saturation (ISat) of p-type OFETs was 0.8 μA, while the threshold voltage VTh was 2.2 V. The results of FESEM have been perform to confirm that deposited thin film grown on the substrate is purely uniform. The Proposed sensor shows that organic gate dielectrics are a low-cost alternative to inorganic gate dielectrics with good electrical performance. The proposed OFET-based sensors have a number of benefits, such as high sensitivity, low cost, quick response, and physical flexibility.

Highlights

Sensor technology has been use in advanced application, resulting in low power, miniaturized, highspeed, and cost-effective system
The Proposed sensor shows that organic gate dielectrics are a low-cost alternative to inorganic gate dielectrics with good electrical performance
We propose a bottom gate Organic Field Effect Transistor (OFET) device composed of PANI as a conducting channel and SiO2 act as an insulator on n-type silicon substrate, which will be used as a humidity sensor based on organic field-effect transistor (OFET)

Summary

Introduction

Sensor technology has been use in advanced application, resulting in low power, miniaturized, highspeed, and cost-effective system. Because of its ease of synthesis, room temperature operation, and relative stability, polyaniline (PANI) has been use for a variety of applications including logic circuit components, electromagnetic shielding, chemical sensing, and anticorrosion This device can be used in low-power applications (Ref [1,2,3,4]). We propose a bottom gate OFET device composed of PANI as a conducting channel and SiO2 act as an insulator on n-type silicon substrate, which will be used as a humidity sensor based on organic field-effect transistor (OFET). This device is compatible with low power applications.

Materials and Instruments

Cleaning the Substrate and Oxidation of Wafers

Polyaniline Deposition Using Synthesis Process

Electrode Formation

Result

Findings

Conclusion