Abstract
Three samples with different thicknesses of polysilicon-silicon interfacial oxide were prepared. The influence of the interfacial oxide on the electrical characteristics of 0.8- mu m BiCMOS VLSIs was studied. From the results, the maximum interfacial oxide thickness allowed for BiCMOS LSIs was determined. To control the interfacial oxide thickness, the ball-up mechanism was studied using HRXTEM combined with energy-dispersive X-ray spectroscopy measurements. The optimum heat treatment after emitter deposition to realize 0.5- mu m BiCMOS VLSI was also determined. >
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