Abstract
Low temperature (<500oC) polysilicon thin-film transistors (LTPS TFTs) prepared by KrF excimer laser annealing with multiple nanowire channels have been fabricated successfully. Grain boundary defects of poly-Si can be reduced effectively by multichannel structure. The ten 40 nm split channels TFT passivated by oxygen and NH3 plasma exhibits good electrical performance, i.e., high ON/OFF current ratio (>106), better subthreshold swing and suppressed kink effect.
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