Abstract

AbstractThe influence of density and shape of hollow silicas (silica hollow tubes (SHT) or hollow glass microspheres (HGM)) on dielectric and heat‐resisting characteristics of poly(ether ketone ketone) (PEKK)/SHT and PEKK/HGM films was systematically investigated. The dielectric characteristics of PEKK/SHT or PEKK/HGM films decrease to a minimum, as their SHT or HGM contents approach 8 or 20 wt%, respectively, and the minimum dielectric constant (εr) and dielectric loss (tan δ) of PEKK/SHT or PEKK/HGM films decrease visibly with decreasing SHT densities. By filling with 0.46 g cm−3 mean density of SHT or HGM fillers, the minimum εr and tan δ of PEKK/SHT films are somewhat smaller than those of PEKK/HGM films. The linear coefficient of thermal expansion (LCTE) values of PEKK/SHT or PEKK/HGM films reduce and their onset degradation temperature values increase gradually with increasing SHT and HGM contents. Low εr/tan δ (2.11/0.0022 and 2.2/0.0027 at 1 MHz), LCTE (35.5 × 10−6 and 31.2 × 10−6 °C−1) and excellent heat‐resisting properties favorable for sixth generation (6G) ultrarapid communication are realized for appropriately prepared PEKK/SHT and PEKK/HGM substrate films. The free‐volume‐hole characteristics of PEKK/HGM or PEKK/SHT films approach a maximum as SHT or HGM contents reach an optimum value of 8 or 20 wt%, respectively. © 2024 Society of Chemical Industry.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.