Abstract
The rectifying junction formed at the interface of solvent-cast, as-prepared poly(3-hexylthiophene) (P3HT) and conductive ZnO-coated glass was investigated by recording the l-V and C-V characteristics. The data have been discussed in terms of the Schottky thermionic-emission current transport model. The diode “quality factor” determined for these devices was 3.6, and indicated imperfect model fitting. The Schottky barrier was estimated as 0.93 eV. A negative differential resistance regime was observed for P3HT/ZnO devices under reverse-bias high-field conditions. This effect was concluded to be a filament-formation burnout failure process.
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