Abstract
A new shorted-anode lateral IGBT with dual gate and p/sup +/ injector (DG-SALIGBT) is proposed and fabricated in order to eliminate the negative differential resistance (NDR) regime, which is the inherent characteristic of SALIGBTs, by modulating the drift region conductivity gradually. The experimental results show that the NDR regime is eliminated completely and the forward voltage drop is reduced considerably in the DG-SALIGBT when compared with the conventional SALIGBT, without sacrificing the switching speed. We have analyzed the device operation mechanism, such as hole injection phenomena, by 2D numerical simulation.
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