Abstract
We report on the fabrication of crystalline nanoribbon network field effect transistors (FETs) using low molecular weight (MW) poly(3-hexylthiophene) (P3HT) with different surface treatments and compare with thin film FETs cast from the same MW regioregular P3HT. Nanoribbon FET shows improved performance with a maximum mobility of 0.012 cm2/V s and current on/off ratios of 6.5×104 due to unique crystalline structure and morphology. With various surface treatments, the nanoribbon FETs show less variation in device mobilities, while thin film FETs show more than ten times variation in device mobilities and up to 100 times change in current on/off ratios.
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