Abstract
Electrically addressed reflective spatial light modulators with polymeric thin films are fabricated on the surface of an n-type metal-oxide-semiconductor (NMOS) chip. The use of a resonator structure is proposed to minimize the driving voltage. The developed device is composed of 1×5 NMOS transistors and nonlinear polymeric materials sandwiched between aluminum electrodes. The electrooptical polymer consists of disperse red 1 (DR1)-doped poly-methyl-methacrylate (PMMA). Poling was demonstrated on this chip and the light modulation was observed using a lock-in amplifier. A modulation efficiency of 2.0 × 10-5 was obtained.
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