Abstract
The near-EF band of the in situ cleaved (111) surface of high-quality n-type In2O3 single crystals was investigated by high-resolution angle-resolved photoemission (ARPES) along the major symmetry lines of the three-dimensional Brillouin zone. Several criteria to pin down Fermi level crossings and Fermi momenta were applied. The near-EF band is of three-dimensional character connected to the bottom of the conduction band. Since the model of a degenerate semiconductor due to high n-type doping is not sufficient the interaction of electron and phonon degrees of freedom is discussed. It is found that the model of Landau-Pekar polarons is capable of describing the observed lineshape qualitatively and the bandwidth of the occupied part of the conduction band quantitatively.
Published Version
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