Polarized Raman spectroscopy study of NiSi film grown on Si(001) substrate

Abstract

We report on the growth of NiSi film on Si(001) substrate with an orientation of NiSi[200]//Si[001]. Polarized Raman spectroscopy was used to assign the symmetry of the NiSi Raman peaks. Raman peaks at 213 cm−1, 295 cm−1, and 367 cm−1 are assigned to be A g symmetry and peaks at 196 cm−1, and 254 cm−1 are B 3g symmetry.