Abstract
We report on the polarization properties of the exciton–polariton modes in GaN. The dispersion curves and the expected emission lineshape of polaritons for all polarization configurations are calculated taking into account the spatial dispersion and the simultaneous exciton–photon coupling of all optically active states. An experimental study of the exciton–polariton luminescence in a free-standing GaN layer is also performed. The spectra reveal a clear difference between the emissions polarized perpendicular and parallel to the c-axis of the crystal. The experimental results are discussed in terms of optical selection rules and population of the polariton states. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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