Abstract
We have shown the effectiveness of polarized photoluminescence imaging for analyzing the structural and spectroscopic properties of small-angle grain boundaries (SA-GBs) in multicrystalline Si. The dislocation-related deep-level emission band at approximately 0.79 eV at room temperature was found to be polarized, whereas the band-edge emission did not show the polarization effect. The anisotropy of the 0.79 eV band was classified into two groups depending on the tilt and twist characteristics of SA-GBs determined by the electron backscatter diffraction measurement.
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