Abstract
Bi0.8La0.2FeO3 (BLFO) films are deposited directly on low-resistance Si (100) substrates by the pulsed laser deposition method. Compared with the typical hysteresis loops of ferroelectric films, those of the BLFO/Si samples, with almost horizontal upper and lower ends, severely shrink in the center part, and the coercive voltage is extremely small. A systematic analysis of the dielectric and ferroelectric characteristics reveals that a p–n junction forms between BLFO and Si, with oxygen vacancies accumulating near the interface. The polarization switching is accompanied by the change of the interface barrier and the migration of charged defects. This work provides a reference for the direct growth of ferroelectric films on silicon substrates and is of great significance for the development of the silicon-based electronic devices.
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