Abstract
Wide bandgap semiconductor AlGaN alloys have been identified as key materials to fabricate solar-blind ultraviolet photodetectors (SBUV PDs). Herein, a self-driven SBUV polarization-sensitive PD (PSPD) based on semipolar (112̅2)-oriented AlGaN films is reported. Using the flow-rate modulation epitaxy method, the full widths at half maximum (FWHMs) for the obtained (112̅2) AlGaN along [112̅3̅] and [11̅00] rocking curves are 0.205° and 0.262°, respectively, representing the best results for heteroepitaxial semipolar AlGaN so far. Density functional theory calculations and experimental results reveal that semipolar AlGaN possesses in-plane anisotropy. The self-driven (112̅2) AlGaN PSPDs exhibit strong polarization-sensitive photoresponse with a polarization ratio of 1.54 at 266 nm and rapid response of 450/450 ms compared to other low-dimensional semiconductor materials. More interestingly, we observe positive and negative photoresponse behaviors under UV light illumination due to surface states and charge transfer. Our results may enable potential applications in multifunctional SBUV optoelectronic devices.
Published Version
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