Abstract
The filamentation of focused 300 fs laser pulses with variable polarization azimuth in bulk of synthetic HPHT diamond demonstrates the possibility of polarization-dependent bandgap control for crystal dielectric photoexcitation. This directly affects the value of the filamentation threshold power, which exhibits the distinct dependence on the polarization azimuth angle. The nonlinear photoluminescence yield, when focusing ultrashort laser pulses with variable polarization in bulk of the synthetic diamond, indicates different polarization-dependent regimes in the dynamics of electron-hole plasma formation, arising due to different processes of photoexcitation and recombination of free carriers during the filamentation process. Thus, at the onset of the filamentation process, at relatively low intensities, the photoluminescence yield rate depends on polarization azimuth controlling bandgap, while at high intensities the resulting dense absorbing plasma exhibits isotropy with respect to laser radiation polarization, and photoluminescence yield weakly depends on polarization azimuth.
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