POLARIZATION PROPERTIES OF LARGE-AREA GaN-BASED LIGHT-EMITTING DIODES WITH AN OMNIDIRECTIONAL NANOSTRUCTURE

Abstract

Large-area GaN -based blue light-emitting diodes (LEDs) on sapphire substrates with an omnidirectional nanostructure consisted of Ag nanoparticles and TiO2/SiO2 Bragg reflector were fabricated. For the LEDs without the omnidirectional nanostructure, the spectra of the P- and S-polarization light are lightly different and the peak wavelength of P- and S-polarization light was estimated to be 464 nm and 463 nm, respectively at forward current of 20 mA. In contrast, for the LEDs with the omnidirectional nanostructure, the spectra of the P- and S-polarization light are nearly the same at forward current of 20 mA and 100 mA.