Abstract
In this article, the light output intensity of InGaN/GaN multiple-quantum-well (MQW) light emitting diodes (LEDs) is improved by using SiO 2/Si 3N 4 distributed Bragg reflectors (DBRs) as window layer and Ag back mirror. The SiO 2/Si 3N 4 DBRs can take several advantages, such as high reflectance with less number of DBR, passive characteristics, and high reliability due to growth in one pump down growth system. The experimental results indicated that InGaN/GaN LEDs with the 3-pair of SiO 2/Si 3N 4 DBRs show a maximum light output intensity of 64 mcd under 20 mA driving current and an improvement of 42% as compared to that of InGaN/GaN LEDs without SiO 2/Si 3N 4 DBRs. In addition, the turn-on voltage, forward resistance, and full width at half maximum (FWHM) of the emission spectra for InGaN/GaN LEDs with the 3-pair of SiO 2/Si 3N 4 DBRs and Ag back mirror are 3.23 V, 16 Ω, and 22.4 nm under 20 mA forward current.
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