Abstract
Surface and edge emission polarization properties of samples containing four InAs/InGaAsP/InP quantum dot layers with a stacking period from 30 nm down to 5.1 nm are investigated. Closely stacked layers show decreasing (constant) edge emission degree of polarization for emission perpendicular to the short dot (long dot) axis. Increase of the surface emission degree of polarization with decreasing period suggests an elongation of the wavefunction as dot period decreases. Use of a miscut substrate eliminates this surface emission polarization dependence, which could lead to edge polarization-independent applications.
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