Abstract
The results of the investigations of the polarization properties in thin layers of vitreous Ge28.5Pb14.0Fe1.0S56.5 are presented. A process of dipole-relaxation polarization was discovered, the activation energy of which turned out to be equal to Ea=(0.97±0.14) eV. It has been determined that charge transfer in the Ge28.5Pb14.0Fe1.0S56.5 hybrid system is a thermally activated process with an activation energy of Ea=(0.54±0.01) eV. The calculation results allow us to conclude that the glass-forming capacity of the (Ge28.5Pb15.0S56.5)100-xFex system decreases linearly with an increase in the proportion of metal in the glass structure. Keywords: charge carrier hopping, thin layers, hybrid chalcogenide, lone-pair electrons.
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