Abstract
Effect of a thin (2 nm) Ge layer in PdIn ohmic contacts with different deposition structure were studied. An appropriate deposition structure may extend the optimum annealing temperature window down to 400°C, whereas an inappropriate one lets the effect of a thin Ge layer be negligible. In the former case, specific contact resistances ( ϱ c) were reduced significantly in low temperature range because a regrown GaAs layer doped heavily with Ge formed. Special attention was paid to confirm the mechanism of ohmic contact formation and a possible reaction sequence was derived. After rapid thermal annealing at 600°C for 10 s, a ϱ c value of 2 × 10 −6 Ω- cm 2 was obtained. Also, a thin (4 nm) In x Ga 1− x As layer with an average x value of 0.7 was observed in the metal/GaAs interface. Increment in ϱ c values was observed after sequential aging at 400°C.
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