Polarization control of an infrared silicon light-emitting diode by dressed photons and analyses of the spatial distribution of doped boron atoms

Abstract

This paper reports the fabrication of a polarization-controlled infrared LED fabricated by dressed-photon–phonon (DPP)-assisted annealing of a bulk Si crystal. For the DPP-assisted annealing, linearly polarized infrared light with a wavelength of 1.342 μm was made normally incident on the top surface of the crystal. The photon energy at the peak of the emitted light spectrum of the fabricated LED was close to that of the light irradiated during the DPP-assisted annealing. A degree of polarization of as large as 0.07 was obtained. The spatial distribution of the doped B atoms in the fabricated LED was measured, and the following findings were obtained: (1) B atoms formed pairs in which the separation between the two B atoms was three times the lattice constant of the Si crystal; and (2) the B atom pairs were apt to orient along the direction perpendicular to the propagation direction and to the polarization direction of the light irradiated during the DPP-assisted annealing. Based on these findings (1) and (2), photon breeding was confirmed with respect to photon energy and spin, respectively.