Abstract
The novel phenomenon called photon breeding realized in Si and GaP light emitting diodes (LEDs) fabricated by dressed-photon-phonon (DPP)-assisted annealing is studied from the viewpoint of nonequilibrium statistical mechanics. Experimental studies reported that the polarization and spectrum characteristics of the light irradiated in fabrication are embedded in spatial configurations of B and Zn atoms doped in the crystals of Si and GaP, respectively, and they are inherited to the light emitted from the LEDs. Stochastic models are introduced to simulate this phenomenon. There the diffusive motion of doped atoms in the DPP-annealing is represented by an interacting random-walk model on a lattice, which shows an aggregation process to make pairs of particles with specified separations. On the spatial structure of these pairings, which corresponds to the experimental condition that phonons with specified momenta are created successively, coupling of electrons and photons are phenomenologically expressed by coupled Poisson processes . Numerical results on the model systems qualitatively explain many basic properties of photon breeding both in fabrication and operation processes observed in experiments.
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