Abstract
Halide Vapor Phase Epitaxy (HVPE) is a promising growth method of bulk GaN. Polarity of GaN grown on GaAs(111)B-As surface was investigated. Depending on whether the GaAs substrate was exposed to GaCI or NH 3 ambient prior to growth, polarity of the low temperature buffer layer exhibited Ga polarity or N polarity. However, GaN layers grown on it at 850 °C always showed Ga polarity independently of the polarity of the buffer layer, suggesting that HVPE prefers Ga polar growth at high temperatures.
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