Abstract
The authors report on the plasma-assisted molecular beam epitaxy growth and carrier transport of Mg-doped In-face (0001) InN. The 1.2 μm thick InN films were grown on GaN:Fe templates under metal rich conditions with Mg concentration from 1 × 1017/cm3 to 3 × 1020/cm3. A morphological transition, associated with the formation of V-shape polarity inversion domains, was observed at Mg concentration over 7 × 1019/cm3 by atomic force microscopy and transmission electron microscopy. Seebeck measurements indicated p-type conductivity for Mg-concentrations from 9 × 1017/cm3 to 7 × 1019/cm3, i.e., as it exceeded the compensating (unintentional) donor concentration.
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Schedule a callMore From: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
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