Abstract
This work demonstrates a newly designed metal-gate coupled recorder for evaluating the plasma charging effect in fin-shaped field-effect transistor (FinFET) back-end-of-line (BEOL) processing steps. With more precise readings, the modified recorders are arranged in an array to further study the charging polarity and patterning effects during plasma processes. These recorder arrays can become a useful tool for process optimization for future CMOS technologies.
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