Abstract
In this paper, we report the exciton polaritons in both positive and negative detuning micro cavities based on InGaN multi-quantum wells (MQWs) and the first polariton lasing in InGaN/GaN MQWs at room temperature by utilizing a 4.5λ Fabry-Perot (F-P) cavity with double dielectric distributed Bragg reflectors (DBRs). Double thresholds corresponding respectively to polariton lasing and photonic lasing are observed along with half-width narrowing and peak blue-shifts. The threshold of polariton lasing is about half of the threshold of photonic lasing. Our results paved a substantial way for ultra-low threshold lasers and room temperature Bose-Einstein Condensate (BEC) in nitride semiconductors.
Highlights
In this paper, we report the exciton polaritons in both positive and negative detuning micro cavities based on InGaN multi-quantum wells (MQWs) and the first polariton lasing in InGaN/GaN MQWs at room temperature by utilizing a 4.5λ Fabry-Perot (F-P) cavity with double dielectric distributed Bragg reflectors (DBRs)
Grandjean et al theoretically anticipated that less than 46 meV inhomogeneous broadening was the prerequisite for the observation of exciton polariton lasing in InGaN QWs systems[15,16]
We reported the first room temperature polariton lasing in InGaN/GaN multi-quantum wells (MQWs) by further thinning the cavity length to 4.5λ F-P cavity structure sandwiched by two dielectric DBRs
Summary
Jinzhao Wu1, Hao Long1*, Xiaoling Shi[1], Song Luo[2], Zhanghai Chen[2], Zhechuan Feng[3], Leiying Ying[1], Zhiwei Zheng[1] and Baoping Zhang1*. Grandjean et al theoretically anticipated that less than 46 meV inhomogeneous broadening was the prerequisite for the observation of exciton polariton lasing in InGaN QWs systems[15,16] They predicted that polariton lasing may be possible by combination of low Indium content and double-sides dielectric distributed Bragg reflectors (DBRs). We reported the first room temperature polariton lasing in InGaN/GaN multi-quantum wells (MQWs) by further thinning the cavity length to 4.5λ F-P cavity structure sandwiched by two dielectric DBRs. By adjusting the cavity length, strong coupling effects were. The nonlinear optical properties, half-width narrowing and peak blue-shifts were confirmed The gap between these two lasing thresholds was smaller compared with GaAs and GaN based binary crystal systems, which should be contributed to the severe inhomogeneous broadening and large negative detuning value. The GaN layer and InGaN/GaN MQWs were grown on sapphire by metal organic vapor phase epitaxy (MOVPE), followed by the bottom DBR deposia 13.5×Ti3O5/SiO2 GaN cavity InGaN/GaN MQWs
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