Abstract
We study the polariton effective mass and spectral density of III–V semiconductors doped with an ordered chain of identical two-level atoms. The polariton spectrum in these semiconductors has an energy gap which is caused by photon coupling to optical phonons. We found an impurity band within the energy gap when the resonance frequencies ω0 of the two-level atoms lie in the polariton energy gap. We calculated the effective mass of a polariton in this impurity band as a function of interatomic distance. The polariton spectral function is also calculated as a function of the interatomic distance. Numerical calculations are performed for GaAs, GaSb, and InAs semiconductors. It is found that as the interatomic distance increases, the polariton energy band width decreases. It is also found that the effective mass of the polariton is hole-like and its magnitude decreases as the interatomic distance increases.
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