Abstract
Vertical cavity surface emitting lasers (VCSELs) based on InGaP lase in the visible close to 650 nm. The polarisation characteristics of these devices are unlike other VCSELs in that they are stable and reproducible and show no switching with increased current. We describe the polarisation characteristics for such devices where the structures were grown on different orientation wafers. We show that polarisation selectivity increases directly with the degree of spontaneous ordering in the InGaP quantum wells, but not with the wafer offset angle.
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