Abstract
We report on pointed cone shaped blue light-emitting diodes (LEDs) based on ZnO and GaN wafer bonding. After wafer bonding of an n-type ZnO substrate to a III–nitride LED wafer, sapphire was removed and n- and p-pads were formed on the same side. Pointed hexagonal ZnO cone was formed by a selective chemical etching method. The output power and external quantum efficiency (EQE) were 24.4 mW and 43.6%, respectively, at a dc forward current of 20 mA.
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