Point-junction and alkali-assisted surface selenium diffusion: Unveiling a two-step method for enhancing the efficiency of VTD-SnS thin-film solar cells

Abstract

Surface and interface engineering in thin-film solar cells (TFSCs) is vital for optimizing charge carrier dynamics, reducing recombination, enhancing material properties, and ultimately improving efficiency and overall performance. In this study, e-beam evaporation was used to deposit selenium (Se) onto tin sulfide (SnS) absorber layers with a thickness of 10 nm to 50 nm. The Se layer optimization was validated using various characterization techniques, which confirmed the formation of micro-sized openings via Se droplet deposition. This Se passivation-plus-local opening geometry plays a crucial role in forming point junctions with the n-type CdS during cell fabrication, presenting a novel approach in state-of-the-art technology. The results revealed a significant enhancement in the conversion efficiency of the SLG/Mo/SnS/Se/CdS/i-ZnO/AZO/Al device to 3.01 % (VOC = 0.326 V, JSC = 20.21 mA cm−2, and FF = 0.45) with 30 nm Se layer deposition. Furthermore, a 30 nm-thick NaF-assisted Se layer was deposited to improve device performance. The diffusion of both Se and Na into the SnS substrate was validated using XRD, SEM, EDS, AFM, and XPS. The power conversion efficiency (PCE) of the SLG/Mo/SnSSe-NaF/CdS/i-ZnO/AZO device was further enhanced to 3.70 % (VOC = 0.340 V, JSC = 22.56 mA cm−2, and FF = 0.48). This enhancement is attributed to the creation of localized junctions via Se surface passivation, and the concurrent SnSSe formation induces band gap tuning and increases the grain size, contributing to additional PCE improvement during Na-assisted Se diffusion.