Abstract
Cadmium arsenide $(\mathrm{C}{\mathrm{d}}_{3}\mathrm{A}{\mathrm{s}}_{2})$ is one of the first materials to be discovered to belong to the class of three-dimensional topological semimetals. Reported room-temperature crystal structures of $\mathrm{C}{\mathrm{d}}_{3}\mathrm{A}{\mathrm{s}}_{2}$ differ subtly in the way the Cd vacancies are arranged within its antifluorite-derived structure, which determines if an inversion center is present and if $\mathrm{C}{\mathrm{d}}_{3}\mathrm{A}{\mathrm{s}}_{2}$ is a Dirac or Weyl semimetal. Here, we apply convergent beam electron diffraction (CBED) to determine the point group of $\mathrm{C}{\mathrm{d}}_{3}\mathrm{A}{\mathrm{s}}_{2}$ thin films grown by molecular-beam epitaxy. Using CBED patterns from multiple zone axes, high-angle annular dark-field images acquired in scanning transmission electron microscopy, and Bloch wave simulations, we show that $\mathrm{C}{\mathrm{d}}_{3}\mathrm{A}{\mathrm{s}}_{2}$ belongs to the tetragonal 4/mmm point group, which is centrosymmetric. The results show that CBED can distinguish very subtle differences in the crystal structure of a topological semimetal, a capability that will be useful for designing materials and thin film heterostructures with topological states that depend on the presence of certain crystal symmetries.
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