Abstract
Abstract Anti-phase domain structures in GaP thin film grown on Si with (001) and (011) orientations by molecular beam epitaxy (MBE) have been studied using transmission electron microscopy. The structural integrety of APDs has been analyzed using a polarity of (111) diffracted discs in the convergent beam electron diffraction (CBED) pattern. The crystallographic reflections of APDs in the present non-centro symmetry crystal were then identified through an observation of the non-polarity in the diffraction intensity of ±111 discs of CBED projection. This result suggests that a CBED pattern may become a simple tool for the determination of a complex APD present in a spharelite structure.
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