Abstract
Single crystals of Bi 2−x In x Te 3 (x = 0 to 0.3) are synthesised from elements of semiconductor purity using a modified Bridgman technique. The results of the measurements of Hall constant, electrical conductivity, and Seebeck coefficient show that increasing value of x leads to a decrease in the concentration of free charge carriers (holes), until inversion of the conductivity type from p to n takes place at a value of x=0.1 and in samples with x > 0.1 an increase in the concentration of free electrons is observed. This effect is accounted for by a model of point defects in the Bi 2−x In x Te 3 crystal lattice. The model is based on the idea of substitutional defects In Bi × leading to a decrease of the concentration of anti-site Bi' Te defects and a simultaneous increase of the concentration of V Te .. vacancies in the Te sublattice
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