Point defect kinetics and dopant diffusion during silicon oxidation

Abstract

Using a full calculation including all the couplings between the dopants and the point defects, we show that the transient effect observed at short times for the influence of oxidation on dopant diffusion in Si cannot be explained by the existence of an energy barrier to the recombination of interstitials and vacancies. We suggest that this transient is due to a transient in the self-interstitial injection, due to high strains at the early stage of the oxidation, which can relax later through the viscoelastic flow of the oxide.