Abstract
We found experimentally a linear dependence between the 1/f noise power in the HgCdTe photodiodes and the fraction of ionized Hg vacancies in the HgCdTe layer. The number and sign of charge carriers were deduced from Hall measurements. Total point-defect concentrations were extracted by using a combination of high-resolution x-ray diffraction for precise measurements of lattice parameters and Fourier transform infrared transmission for determination the Cd content. Experimental findings support the theoretical model recently developed by Grüneis [F. Grüneis, Physica A 282, 108 (2000); 290, 512 (2001)].
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
