Abstract
Most of the models of thermal solid phase epitaxial (SPEG) growth and ion beam induced epitaxial growth (IBIEG) take into account the effect of point defects on the growth parameters. It is assumed that vacancies, interstitials, divacancies, or dangling bonds in crystals can enhance the processes of the SPEG growth. However, up to now reliable experimental data indicating the type of point defects responsible for this effect are not available. In the present article the processes of low-temperature (300°C) SPEG growth and layer-by-layer amorphisation have been considered. Both processes can be involved in Ar + implanted amorphous silicon layers in the presence of a point defect flux originating on the He + implanted crystal region located deeper than the Ar + implanted surface amorphous layer. The influence of alternating Ar + and He + implantations on these processes has been investigated. A model which accounts for the experimental dependences has been developed.
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