Atomistic examinations of the solid-phase epitaxial growth of silicon

Abstract

The low-temperature vapor deposition of silicon thin films and the ion implantation of silicon can result in the formation of amorphous silicon layers on a crystalline silicon substrate. These amorphous layers can be crystallized by a thermally activated solid-phase epitaxial (SPE) growth process. The transformations are rapid and initiate at the buried amorphous to crystalline interface within the film. The initial stages of the transformation are investigated here using a molecular dynamics simulation approach based upon a recently proposed bond order potential for silicon. The method is used first to predict an amorphous structure for a rapidly cooled silicon melt. The radial distribution function of this structure is shown to be similar to that observed experimentally. Molecular dynamics simulations of its subsequent crystallization indicate that the early stage, rate limiting mechanism appears to be removal of tetrahedrally coordinated interstitial defects in the nominally crystalline region just behind the advancing amorphous to crystalline transition front. The activation barriers for this interstitials migration within the bulk crystal lattice are calculated and are found to be comparable to the activation energy of the overall solid-phase epitaxial growth process simulated here.