Abstract
AbstractThe effect of uniaxial plastic deformation, indentation, and scribing along the selected axes on the excitonic and deep level photoluminescence (PL) of CdS, CdSe, CdTe, and ternary CdSeTe compounds has been studied. Dislocations movement produces new near band‐gap narrow PL lines, and changes initial wide PL bands (the deep level emission), in particular, a relative intensity increase or appearing of the near midgap 0.8 eV, 1.1 and 1.45 eV bands in CdTe, and corresponding PL bands in other II‐VI compounds (CdS, CdSe, and CdSeTe) (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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