Abstract
The linear electro-optic (Pockels) effect of wurtzite gallium nitride (GaN) films and six-period GaN/Al<sub>x</sub>Ga<sub>1-x</sub>N superlattices with different quantum structures were demonstrated by a polarization-maintaining fiber-optical Mach-Zehnder interferometer system with an incident light wavelength of 1.55μm. The samples were prepared on (0001) sapphire substrate by low-temperature metalorganic chemical vapor deposition (MOCVD). The measured coefficients of the GaN/Al<sub>x</sub>Ga<sub>1-x</sub>N superlattices are much larger than those of bulk material. Taking advantage of the strong field localization due to resonances, GaN/Al<sub>x</sub>Ga<sub>1-x</sub>N SL can be proposed to engineer the nonlinear responses.
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