Abstract
A technique for p-n junction formation in silicon, based on deposition of boron on silicon at room temperature followed by laser irradiation is described. Transmission electron microscopy and electrical measurements indicate that as a result of the laser irradiation the boron is dissolved in the silicon and becomes electrically active. Diode characteristics of p-n junctions produced by this technique are quite good. The dopant profile distribution has been obtained using secondary ion mass spectrometry and is in qualitative agreement with simplified theoretical calculations.
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