PN Junction Defects Detection in Solar Cells Using Noise Diagnostics

Abstract

PN junction is one of the most important parts of solar cells. Its quality affects lifetime and efficiency of solar cells. Local defects which appear in PN junctions during the manufacture process are very important from this point of view. These are caused by localized areas with high donor or acceptor doping agents, impurities, dislocations or other mechanisms which effect in lower breakdown voltage of PN junction in reverse bias. Several base methods can be used for solar cells nondestructive diagnostics. Measuring methods of low-band noise current effective value with reverse bias junction were used in this paper. This method allows detection of local defects and volume degradation in PN junctions of solar cells and it can be used for detection of microplasma noise. This noise is an impulse noise and it is caused by local avalanche breakdowns in small area of the junction. It can be recognized by two or more level random square current pulses with constant height, random appearance time and random pulse length. Information about these effects can be used in noise diagnostics of structural defects of PN junctions and then it can be used for quality and lifetime estimation of samples with these parameters.