Behavior of temperature inside PN junction during microplasma switching

Abstract

The contribution is focused on determination of a temperature inside PN junction defect regions. These defect regions are called microplasmas. The microplasma is specified like region with a lower strong-field avalanche ionization breakdown voltage than other homogenous PN junction regions. The existence of such regions may lead to local avalanche breakdowns occurring in reverse-biased PN junction at certain voltage. These local avalanche breakdowns may exhibit like a current impulse noise. These impulses are usually represented by constant amplitude, random pulse width and random pulse origin time points. During the measurement of the microplasma noise was observed a relation between two-states current impulse noise and a temperature of a PN junction defect region. The main goal of this article is a determination of temperature behavior inside the microplasma region depends on a current impulse noise time behavior.