Abstract
A propagation matrix method is used to investigate the quantum conductance of an n-type double-top gate device under a strong Rashba-Zeeman coupling interaction. The effects of a plunger gate potential and the total top gate length on the magneto conduction properties are investigated. Transcendental equations and analytical formulas are derived to accurately predict the resonance state and hole-like bound state structures. Furthermore, the effect of the distance of the two top gates from the plunger gate is examined for both symmetric and asymmetric structures. The analytical technique employed in this study provides an accurate and reliable approach for calculating the conductance of the quantum transport and is therefore beneficial for the design of n-type semiconductor devices.
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