Abstract
The general equations of steady-state lifetime in semiconductors with multiple deep impurity levels are derived based on the recombination theory. From the obtained equations the six capture cross sections of three Pt-induced levels in silicon are experimentally determined. The behaviors of minority carrier lifetime and leakage current in Pt-diffused devices are also discussed. It is found that the minority carrier lifetime is influenced by the three Pt-related levels and that the major contribution to the leakage current arises from the level of E c-0.52 eV.
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