Abstract
Platinum–aluminum (Pt–Al) alloy top electrode on the retention improvement of gadolinium oxide (GdxOy) resistive switching memory was investigated. The aluminum oxide (AlxOy) formation at the Pt–Al alloy top electrode and GdxOy interface will lead to the high Schottky barrier height. Further, the more aluminum incorporation can suppress the crystallization of platinum electrode after the post-metallization annealing. Both the crystallization suppression of Pt top electrode and the interfacial aluminum oxide formation will prevent the oxygen ions from out-diffusion through Pt grain boundaries, responsible for the retention enhancement of the GdxOy resistive switching memory.
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