Abstract
Platinum–aluminum (Pt–Al) alloy top electrode on the retention improvement of gadolinium oxide (GdxOy) resistive switching memory was investigated. The aluminum oxide (AlxOy) formation at the Pt–Al alloy top electrode and GdxOy interface will lead to the high Schottky barrier height. Further, the more aluminum incorporation can suppress the crystallization of platinum electrode after the post-metallization annealing. Both the crystallization suppression of Pt top electrode and the interfacial aluminum oxide formation will prevent the oxygen ions from out-diffusion through Pt grain boundaries, responsible for the retention enhancement of the GdxOy resistive switching memory.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
