Abstract
Bipolar resistive switching memory (RRAM) relies on ion migration effects taking place at a conductive filament (CF). Understanding the evolution of the CF during set and reset transitions is essential for predicting RRAM scalability and for developing new methods for storage and computation. This work describes the evolution of the CF during bipolar resistive switching through numerical simulations of ion drift/diffusion. The defect distribution profile for increasing current after set transition and for increasing voltage during set transition are shown. Finally, the asymmetric shape of the CF is evidenced through polarity-dependent experiments and explained through numerical simulations.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
