Plasmonic terahertz modulator based on a grating-coupled two-dimensional electron system

Abstract

Electrically driven broadband modulator with large modulation depth and high speed is in high demand to meet the technical advancing and applications in terahertz fields recently. So far, the single-particle non-resonant absorption mechanism described by the Drude conductivity has been utilized in most of the related researches but is still not efficient enough. Here we proposed and demonstrated a terahertz modulator based on the collective electron plasma excitations (plasmons) in a grating-coupled two-dimensional electron gas in GaN/AlGaN heterostructure. By switching between the resonant and non-resonant conditions of the 2D plasmon excitation enabled by applying proper gate biases, the transmission of terahertz electromagnetic waves can be efficiently manipulated. Taking advantage of its resonant characteristic combined with the strong electric field enhancement in the active region, we experimentally achieved a maximum intensity modulation depth of 93%, a 3 dB operation bandwidth of ∼400 kHz, and a small required driving voltage amplitude of 2 V at a cryogenic temperature of 8.7 K. Owing to its excellent performances, this active plasmon-based terahertz modulator may offer some promising solutions in several fields of terahertz technology in the future.