Plasmonic 1×200 array scanner based on 65-nm CMOS asymmetric FETs for real-time terahertz

Abstract

Terahertz (THz) imaging technology has a great potential application owing to the unique properties of THz wave that has both permeability and feature of straight [1]. Especially for real-time THz imaging detectors, field-effect transistor (FET)-based plasmonic THz detectors [2] are now being intensively developed in multi-pixel array configuration by exploiting the silicon (Si) CMOS technology advantages of low-cost and high integration density. In terms of the circuit design approach, by utilizing resistive self-mixing in the FET channel, a 0.65 THz focal plane array (FPA) detector was reported [3] and more recently, a 1 k-pixel camera has been demonstrated for a real-time THz imaging by 65-nm CMOS technology [4]. In this work, we experimentally demonstrate the real-time terahertz (THz) imaging of moving object on the conveyer belt by implementing asymmetric FET-based plasmonic 2×200 array scanner in 65-nm CMOS technology. Based on the enhanced detecting performance from our previous works [5][6], fast and uniform detection results are presented by novel device and circuit design for real-time THz imaging.